Methods of forming capacitors

ABSTRACT

Some embodiments include methods of forming capacitors. Storage nodes are formed within a material. The storage nodes have sidewalls along the material. Some of the material is removed to expose portions of the sidewalls. The exposed portions of the sidewalls are coated with a substance that isn&#39;t wetted by water. Additional material is removed to expose uncoated regions of the sidewalls. The substance is removed, and then capacitor dielectric material is formed along the sidewalls of the storage nodes. Capacitor electrode material is then formed over the capacitor dielectric material. Some embodiments include methods of utilizing a silicon dioxide-containing masking structure in which the silicon dioxide of the masking structure is coated with a substance that isn&#39;t wetted by water.

TECHNICAL FIELD

Methods of forming capacitors, and methods of utilizing silicondioxide-containing masking structures.

BACKGROUND

A continuing goal of integrated circuit fabrication is to increaseintegration density. An approach utilized for achieving increasedintegration density is to reduce the footprint of individual electricalcomponents so that more components can be fit across a unit ofsemiconductor real estate. For instance, capacitors have becomeincreasingly tall and thin in an effort to reduce the footprint ofindividual capacitors, while retaining desired levels of capacitance.

A problem that can occur as capacitors become tall and thin is that thetall, thin storage node structures formed during fabrication of thecapacitors may tip, or even topple, during a fabrication process.Accordingly, various structures have been developed to provide supportto the storage node structures. Example support structures are latticestructures, such as those described in U.S. Pat. No. 6,667,502, and inU.S. Patent Publication Numbers 2005/0051822 and 2005/0054159.

Another problem that may occur during fabrication of tall, thin storagenodes is that spaces between adjacent storage nodes may function ascapillaries during an etching process, and/or during a rinsing process,so that solution is drawn into such spaces. Adhesion of the solutionwith the adjacent storage nodes may pull the adjacent storage nodes intoone another, and the storage nodes may then stick to one another. Thesticking of the storage nodes to one another may be referred to asstiction.

A prior art capacitor storage node fabrication process is described withreference to FIGS. 1-5 to illustrate the stiction problem.

Referring to prior art FIG. 1, a portion of a semiconductor construction10 is illustrated. The construction includes a semiconductor base 12.The base 12 may be, for example, a semiconductor wafer, such as amonocrystalline silicon wafer. The base 12, alone or in combination withvarious materials, may be referred to as a “semiconductive substrate” or“semiconductor substrate.” The terms “semiconductive substrate” and“semiconductor substrate” mean any construction comprisingsemiconductive material, including, but not limited to, bulksemiconductive materials such as a semiconductive wafer (either alone orin assemblies comprising other materials thereon), and semiconductivematerial layers (either alone or in assemblies comprising othermaterials). The term “substrate” refers to any supporting structure,including, but not limited to, the semiconductive substrates describedabove.

A pair of electrically conductive nodes 14 and 16 are supported by base12. The nodes may be, for example, conductively doped regions of thesemiconductor wafer and/or pedestals (for instance, metal-containingpedestals).

A plurality of materials 18, 20 and 22 are over base 12, and over nodes14 and 16. The materials 18, 20 and 22 may be undoped silicon dioxide,doped silicate glass, and silicon nitride, respectively. The dopedsilicate glass may be, for example, phosphosilicate glass (PSG),borophosphosilicate glass (BPSG), fluorosilicate glass (FSG), etc. Thematerial 20 may be referred to as a support material, in that itultimately supports capacitor storage nodes (as discussed below), andthe material 22 may be referred to as a lattice material in that itultimately forms a lattice to provide additional support for thecapacitor storage nodes.

Referring to FIG. 2, openings 24 and 26 are formed through materials 18,20 and 22, and to nodes 14 and 16, respectively. The openings may beformed by providing a photolithographically-patterned photoresist mask(not shown) over material 22; transferring a pattern from thephotoresist mask to materials 18, 20 and 22 with one or more etches, andthen removing the mask to leave the structure shown in FIG. 2.

Referring to FIG. 3, electrically conductive storage node material 28 isformed within openings 24 and 26. The storage node material may comprisetitanium nitride. The storage node material may be formed by depositingthe storage node material within the openings and over material 22, andthen removing the storage node material from over material 22 withchemical-mechanical polishing (CMP). The storage node material formsstorage nodes 23 and 25 within openings 24 and 26, respectively.

Referring to FIG. 4, an opening 30 is formed through material 22 toexpose the underlying support material 20. Opening 30 may berepresentative of a plurality of openings formed through material 22 sothat all of material 20 may be removed with a subsequent isotropic etch(discussed below with reference to FIG. 5). Opening 30 may be formed byproviding a photolithographically-patterned photoresist mask (not shown)over material 22; transferring a pattern from the photoresist mask tomaterial 22 with an etch, and then removing the mask to leave thestructure shown in FIG. 4.

Referring to FIG. 5, support material 20 (FIG. 4) is removed with anisotropic etch. It appears that material 22 is floating in the view ofFIG. 5, because the only structures shown in FIG. 5 are those within thecross-sectional plane of the figure. Structures out of the plane are notillustrated in order to simplify the drawing. The material 22 is thusnot floating at the processing stage of FIG. 5, but instead is supportedby regions that are not visible in the cross-section shown in FIG. 5.The supporting regions may be analogous to those shown and described inU.S. Patent Publication No. 2005/0054159.

Support material 20 (FIG. 4) may be removed with an aqueous etchantcomprising about 5% (by volume) hydrofluoric acid in water. After theetching of material 20, the etchant may be removed by a rinse withdeionized water, and then the deionized water may be removed by dryingthe construction 10 (i.e., the water may be volatilized from theconstruction). The drying may be enhanced through utilization ofisopropyl alcohol, acetone and/or other azeotropic solvents.

A capillary 31 forms between adjacent storage nodes 23 and 25. Solventwithin such capillary during etching, rinsing and/or drying may pull thematerial 28 of storage node 23 into the material 28 of storage node 25.The material 28 of storage node 23 sticks to the material 28 of storagenode 25 through stiction forces, and thus a short is formed andmaintained between the two storage nodes 23 and 25.

It would be desirable to develop new methods of patterning capacitorswhich alleviate or prevent the shorting illustrated in FIG. 5. It wouldbe further desirable for the new methods to have applications beyondfabrication of capacitors.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1-5 are diagrammatic cross-sectional views of a portion of asemiconductor construction illustrating various stages of a prior artprocess for forming capacitor storage nodes.

FIGS. 6-10 are diagrammatic cross-sectional views of a portion of asemiconductor construction illustrating various stages of an exampleembodiment process for forming capacitors. The processing stage of FIG.6 is subsequent to that of prior art FIG. 4.

FIG. 11 is a diagrammatic cross-sectional view of a portion of asemiconductor construction illustrating a process stage of an exampleembodiment process for forming capacitors. The process stage of FIG. 11is subsequent to that of FIG. 6.

FIGS. 12-18 are diagrammatic cross-sectional views of a portion of asemiconductor construction illustrating various stages of anotherexample embodiment process for forming capacitors.

FIGS. 19-23 are diagrammatic cross-sectional views of a portion of asemiconductor construction illustrating various stages of an exampleembodiment process utilizing a silicon dioxide-containing mask topattern materials associated with a semiconductor substrate.

FIG. 24 is a diagrammatic cross-sectional view of a drop of liquid on asubstrate. FIG. 24 illustrates a “contact angle,” of the liquid relativeto the underlying substrate.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

Some embodiments include methods in which surfaces are protected withhydrophobic and/or non-wetting material to alleviate, and possibly evenprevent, stiction between adjacent surfaces during subsequent etching,rinsing and/or drying processes. The term “non-wetting” is utilized withits traditional meaning that a contact angle between water and a“non-wetting” surface is greater than 90°. The term “non-wetting” isused herein to refer to non-wettability relative to aqueouscompositions, rather than to other types of liquids.

FIG. 24 illustrates a drop of liquid 600 over a substrate 602, and showsa line 604 tangent to a surface of liquid 600 at a three-phase boundarywhere the liquid, solid (a surface of substrate 602) and a gas (theatmosphere around the liquid and substrate) intersect. The contact angleis defined as the angle between line 604 and the surface of substrate602, and is labeled θ in the diagram of FIG. 24. In some embodiments, ahydrophobic material may be chosen such that it forms a contact angle ofat least 60° with an aqueous solution, at least 70° with an aqueoussolution, at least 90° with an aqueous solution, or at least 100° withan aqueous solution. Example embodiments are described with reference toFIGS. 6-23; with FIGS. 6-10 illustrating a first embodiment, FIG. 11illustrating a second embodiment, FIGS. 12-18 illustrating a thirdembodiment, and FIGS. 19-23 illustrating a fourth embodiment.

Referring to FIG. 6, construction 10 of prior art FIG. 1 is shown at aprocessing stage subsequent to that of prior art FIG. 3. Theconstruction includes the base 12, electrically conductive nodes 14 and16, and materials 18, 20 and 22 discussed previously. The constructionfurther includes the openings 24 and 26 patterned within materials 18,20 and 22; and extending entirely through the materials 18, 20 and 22.Also, the construction of FIG. 6 includes the storage nodes 23 and 25comprising the material 28 formed within the openings 24 and 26.Additionally, the opening 30 has been formed through material 22.

The various materials of FIG. 6 may be identical to those describedabove with reference to prior art FIGS. 1-5. Accordingly, material 18may comprise, consist essentially, or consist of silicon dioxide;material 20 may be a support material comprising, consisting essentiallyof, or consisting of doped silicate glass (for instance, BPSG or PSG);material 22 may be a lattice material comprising, consisting essentiallyof, or consisting of silicon nitride; and storage node material 28 maycomprise, consist essentially of, or consist of metal nitride, such as,for example, titanium nitride.

In some embodiments, material 20 may be referred to as a silicondioxide-containing material, and material 28 may be referred to as ametal-containing material.

Storage nodes 23 and 25 are container-shaped storage nodes.Container-shaped storage node 23 has inner sidewall surfaces 51 andouter sidewall surfaces 53; and similarly, container-shaped storage node26 has inner sidewall surfaces 55 and outer sidewall surfaces 57. Thestorage nodes 23 and 25 also have top surfaces 47 and 49, respectively.The container-shaped storage nodes may have any suitable shape, and insome embodiments will be circular or elliptical when viewed from above,similar to the storage nodes described in U.S. Patent Publication Number2005/0054159.

Some etching of support material 20 has occurred at the processing stageof FIG. 6. Such etching has exposed portions of outer sidewall surfaces53 and 57 of storage nodes 23 and 25, respectively; and has left otherportions of the outer sidewall surfaces remaining covered by supportmaterial 20. The covered portions of the outer sidewall surfaces may bereferred to as unexposed regions 61 and 63 of the storage nodes 23 and25, respectively; and the exposed portions of the outer sidewallsurfaces may be referred to as exposed segments 65 and 67 of the storagenodes 23 and 25, respectively.

The etching of material 20 may be accomplished with an isotropic etchsimilar to the etch discussed above with reference to prior art FIG. 5.Accordingly, the etching of material 20 may utilize an aqueous etchantcomprising about 5% (by volume) hydrofluoric acid in water.Subsequently, the aqueous etchant may be rinsed from construction 10,and the construction dried to leave the construction at the processingstage of FIG. 6.

The construction of FIG. 6 does not have the stiction problems discussedabove with reference to prior art FIG. 5, because the support material20 has not been removed to a level that would enable such stiction tooccur. The amount of material 20 removed may be less than or equal toabout half of the total thickness of material 20 that was initiallypresent (in other words, the thickness of material 20 at the processingstage of FIG. 4). In some embodiments, material 20 may be formed to havea thickness of from about 1000 nanometers (in other words, about 1micron) to about 3000 nanometers at the processing stage of FIG. 4, andthe amount of material 20 removed at a processing stage of FIG. 6 may befrom about 500 nanometers to about 2500 nanometers.

Referring to FIG. 7, a material 50 is formed along the exposed segments65 and 67 of the outer sidewall surfaces of the storage nodes 23 and 25,respectively. Material 50 may comprise any material which avoids thestiction discussed above with reference to FIG. 5. In some embodiments,material 50 may be a hydrophobic material to which an aqueous solutionhas a contact angle of at least 60°, at least 70°, at least 90°, or atleast 100°. In some embodiments, material 50 may be a non-wettingmaterial, (i.e., a material to which an aqueous solution has a contactangle of at least 90°).

Material 50 may, for example, correspond to material formed utilizingone or more halogen-and-silicon-containing compositions as precursors;and in some embodiments may be formed utilizing one or morehalogen-containing silanes as precursors. In some embodiments, material50 may be formed from one or more of the precursorsdimethyldichlorosilane, perfluorooctyltrichlorosilane andperfluorodecanoic acid. Accordingly, in some embodiments material 50 mayconsist of silicon and carbon; or may consist of silicon, carbon, andoxygen; or may consist of silicon, carbon and halogen; or may consist ofsilicon, carbon, halogen and oxygen.

Material 50 may be considered to be coated on the storage nodes, andaccordingly to form a coating along the exposed surfaces of the storagenodes. Such coating may be formed to any suitable thickness. In someembodiments the coating may be formed to be only a few molecules thick,and in other embodiments the coating may be formed to be 10 or moremolecules thick. If the coating of material 50 is formed to be more thana few molecules thick, such coating may correspond to a mat extendingaround the storage nodes and providing significant structural support tothe storage nodes.

Material 50 is shown formed along all exposed surfaces of construction10, and accordingly extends along exposed surfaces of materials 20 and22, in addition to the exposed surfaces of storage node material 28. Inother embodiments, material 50 may be selectively formed so that thematerial 50 is only along exposed surfaces of storage node material 28.FIG. 11 shows an example embodiment in which material 50 is selectivelyformed only along exposed surfaces of storage node material 28.

Referring to FIG. 8, a remaining portion of support material 20 (FIG. 7)is removed. Such exposes the portions 61 and 63 of the outer sidewallsurfaces 53 and 57 of storage nodes 23 and 25. Material 20 may beremoved with the aqueous hydrofluoric acid etch, rinsing and dryingdiscussed above relative to prior art FIG. 5. In embodiments like thoseof FIG. 11 in which coating 50 does not cover material 20, the material20 may be removed with only the processing discussed above withreference to prior art FIG. 5. In contrast, in embodiments like that ofFIG. 7 in which coating 50 covers an upper surface of material 20, itmay be desired to utilize an additional step of punching throughmaterial 50 to expose material 20 prior to the isotropic etching ofmaterial 20. Such punch-through of material 50 may be accomplished withan etch conducted through the opening 30 that extends through latticematerial 22. Accordingly, in some embodiments lattice material may beutilized as a patterned mask having the opening 30 extendingtherethrough, with such opening defining a region of material 50 that isto be exposed to a punch-through etch.

Material 50 is a material resistant to the etching and rinsing utilizedto remove material 20, and accordingly material 50 remains to protectthe upper outer sidewall surfaces 65 and 67 of storage nodes 23 and 25,respectively. The capillary 31 discussed above with reference to priorart FIG. 5 is present in the embodiment of FIG. 8. However, in theembodiment of FIG. 8, in contrast to the prior art process of FIG. 5,such capillary has not lead to stiction between the adjacent outersidewall surfaces of the storage nodes 23 and 25. The hydrophobic and/ornon-wetting properties of material 50 alleviate adhesion within thecapillary 31, and thus the stiction between the outer sidewall surfacesof the adjacent capacitor storage nodes is avoided. In some embodiments,material 50 causes beading of aqueous solution from its surface, and orchanges a meniscus of aqueous solution within capillary 31 from concaveto convex. In some embodiments, some stiction may occur in spite ofmaterial 50, but material 50 can still provide an advantage in that itcan provide insulation between adjacent storage nodes to avoidelectrical shorting of the storage nodes.

Referring to FIG. 9, material 50 (FIG. 8) is removed. Such removal maybe accomplished utilizing any suitable processing. The processing may bea dry etch to avoid having water entering capillary 31 during or afterremoval of material 50. The removal of material 50 may, for example,utilize thermal treatment at a temperature of at least about 100° C.,such as, for example, thermal treatment utilizing a temperature of fromabout 100° C. to about 400° C. An oxidant may be utilized during thethermal treatment, with suitable oxidants being oxygen-containingoxidants selected from the group consisting of O₂, O₃, and mixturesthereof. Alternatively, other suitable materials, such as, for example,ammonia, may be utilized during the thermal treatment. In someembodiments, the thermal treatment may utilize a temperature of greaterthan 200° C. For instance, films formed from octyltrichlorosilanederivatives may thermally degrade at temperatures of greater than orequal to about 225° C., which can render them suitable for decompositionand desorbtion at temperatures traditionally utilized for dielectricdeposition, (i.e., temperatures of about 275° C.).

Referring to FIG. 10, capacitor dielectric material 52 is formed alongthe inner and outer sidewall surfaces 51 and 53 of capacitor storagenode 23; and also along the inner and outer sidewall surfaces 55 and 57of capacitor storage node 25. Subsequently, capacitor electrode material54 is formed over the capacitor dielectric material. The capacitorelectrode material 54 may be considered to form a capacitor plate thatextends across multiple capacitors.

The capacitor dielectric material and capacitor electrode material maycomprise any suitable compositions. For instance, the capacitordielectric material may comprise any of various electrically insulativeoxides and nitrides; and the capacitor electrode material may compriseany of various electrically conductive compositions, including, forexample, metals (e.g., platinum, titanium, tungsten, ruthenium, etc.),metal-containing compositions (e.g., metal nitride, metal silicides,etc.) and conductively-doped semiconductor materials (e.g.,conductively-doped silicon, conductively-doped germanium, etc.).

If the coating 50 degrades at the temperature utilized for formingdielectric 52, the deposition of the dielectric 52 and removal of thecoating 50 may be accomplished in a common reaction chamber withoutbreaking vacuum to the chamber, and in some embodiments may even beaccomplished in a common processing step so that coating 50 is beingvolatilized as dielectric 52 is being deposited.

The capacitor electrode material 54, dielectric material 52 and storagenode 23 together form a container-type capacitor 56; and the capacitorelectrode material 54, dielectric material 52 and storage node 25together form a container-type capacitor 58. The capacitors 56 and 58may be electrically coupled to a bitline 60 through transistor gates 62and 64. The bitlines and transistor gates are diagrammaticallyillustrated in FIG. 10, and may comprise conventional constructions. Thebitlines and transistor gates may be formed at any appropriateprocessing stage, and may, for example, be present prior to theprocessing stage of FIG. 6. The transistor gates 62 and 64 may becomprised by wordlines, and such wordlines in combination with thebitlines, enable unique addressing of dynamic random access memory(DRAM) cells comprising capacitors 56 and 58. Thus, capacitors 56 and 58may be incorporated into a DRAM array.

The shown construction utilizes a common bitline to address capacitors56 and 58, as would occur if the capacitors were along a common row asone another in the DRAM array. In other embodiments, adjacent capacitors56 and 58 may be addressed by a common wordline and by differentbitlines from one another, if the adjacent capacitors are along a commoncolumn of the memory array.

In the shown embodiment, material 50 (FIG. 8) is removed prior toformation of capacitor dielectric material 52. In other embodiments,material 50 may remain and be covered by capacitor dielectric material52 so that material 50 becomes part of the capacitor dielectric of thefinished capacitor constructions.

FIGS. 6-11 describe an embodiment for forming container-type capacitors.In other embodiments, stud-type capacitors may be formed. FIGS. 12-18illustrate an example embodiment for forming stud-type capacitors.Similar numbering will be used for describing FIGS. 12-18 as is usedabove for describing FIGS. 6-11, where appropriate.

Referring to FIG. 12, a construction 60 is illustrated at a processingstage during a fabrication sequence utilized for forming stud-typecapacitors. The processing stage of FIG. 12 is similar to that of priorart FIG. 4. The construction 60 includes the base 12, electrical nodes14 and 16, and support material 20 discussed above with reference toprior art FIGS. 1-4. Openings 24 and 26, analogous to those of FIG. 4,have been patterned through material 20 to expose upper surfaces ofelectrical nodes 14 and 16. Construction 60 differs from theconstruction 10 of FIG. 4 in that materials 18 and 22 have been omitted.In other embodiments, one or both of materials 18 and 22 may be presentduring fabrication of stud-type capacitors.

Referring to FIG. 13, storage node material 62 is formed within openings24 and 26. The storage node material forms storage node pedestals 64 and66 within the openings 24 and 26, respectively. The storage nodematerial may comprise any suitable electrically conductive composition,or combination of compositions; and may, for example, comprise one ormore of various metals (e.g., platinum, titanium, tungsten, ruthenium,etc.), metal-containing compositions (e.g., metal nitride, metalsilicides, etc.) and conductively-doped semiconductor materials (e.g.,conductively-doped silicon, conductively-doped germanium, etc.).

The storage node pedestal 64 comprises an upper surface 65, andcomprises sidewall surfaces 67; and similarly, the storage node pedestal66 comprises an upper surface 69, and comprises sidewall surfaces 71.The sidewall surfaces 67 and 71 may be referred to as outer sidewallsurfaces in analogy to the outer sidewall surfaces 53 and 57 of thecontainer-type storage nodes of FIGS. 6-11.

Referring to FIG. 14, material 20 is subjected to an etch whichpartially removes the material. The partial removal of material 20exposes upper segments 68 and 70 of sidewall surfaces 67 and 71,respectively; while leaving lower segments 72 and 74 of the surfaces 67and 71 remaining covered by material 20. The material 20 may be removedby the hydrofluoric acid etch, rinsing and drying discussed above withreference to FIG. 5.

Referring to FIG. 15, material 50 is formed along exposed surfaces ofstorage node material 62. In the shown embodiment, material 50 isselectively formed along exposed surfaces of storage node material 62relative to exposed surfaces of support material 20. In otherembodiments, material 50 may be formed non-selectively so that material50 is formed along both the exposed surfaces of material 20 and theexposed surfaces of storage node material 62.

Referring to FIG. 16, a remaining portion of material 20 is removed toexpose segments 72 and 74 of surfaces 67 and 71, respectively. Acapillary 81 analogous to the capillary 31 of FIGS. 5 and 8 is presentduring removal of material 20. Such capillary could lead to stictionbetween the adjacent storage node pillars 64 and 66 in the absence ofmaterial 50. However, material 50 reduces adhesion within the capillaryrelative to that which would exist in the absence of material 50, andthus eliminates such stiction.

Referring to FIG. 17, material 50 (FIG. 16) is removed. Such removal canutilize one or more of the methods discussed above with reference toFIG. 9.

Referring to FIG. 18, dielectric material 52 and capacitor electrodematerial 54 are formed over and around storage nodes 64 and 66. Thestorage node 64 corresponds to a stud, and, together with dielectricmaterial 52 and capacitor electrode material 54 forms a stud-typecapacitor 80. Similarly, the storage node 66 corresponds to a stud, and,together with dielectric material 52 and capacitor electrode material 54forms a stud-type capacitor 82. The capacitors 80 and 82 may beincorporated into a DRAM array. In the shown embodiment, the capacitorsare connected through transistor gates 62 and 64 to a bitline 60,analogous to the connections discussed above with reference to FIG. 10.

The processing of FIG. 6-18 utilizes a coating 50 during fabrication ofcapacitors to avoid stiction between adjacent capacitors. The coatingmay also be utilized in other embodiments in which is desired to avoidstiction between adjacent structures. For instance, the coating may beutilized to coat adjacent silicon dioxide-containing masking structuresto avoid stiction between such structures as discussed with reference toFIGS. 19-23.

FIG. 19 shows a construction 100 comprising a silicon dioxide-containingmasking structure comprising a plurality of features 102, 104, 106 and108. The masking structure is over a substrate 110. The maskingstructure is formed of a material 112 which may comprise, consistessentially of, or consist of silicon dioxide. A plurality of openings114, 116 and 118 extend through the masking structure to an uppersurface of the substrate.

The masking structure may be formed by forming a layer of material 112over the substrate, providing a photolithographically-patternedphotoresist mask (not shown) over material 112; transferring a patternfrom the photoresist mask to material 112 with an etch, and thenremoving the photoresist.

Substrate 110 comprises a semiconductor base 126, a gate dielectric 128,an electrically conductive charge-retaining material 130, an intergatedielectric material 132, an electrically conductive control gatematerial 134, an electrically insulative cap material 136, and apattern-transfer material 138. The gate dielectric 128, electricallyconductive charge-retaining material 130, intergate dielectric material132, electrically conductive control gate material 134, and electricallyinsulative cap material 136 together correspond to a controlled gatestack (e.g., a flash gate stack), and ultimately are to be patternedinto a plurality of controlled gates.

Base 126 may, for example, comprise, consist essentially of, or consistof monocrystalline silicon.

Gate dielectric 128 may, for example, comprise, consist essentially of,or consist of silicon dioxide.

Charge-retaining material 130 may, for example, comprise, consistessentially of, or consist of one or more of metal (for instance,tungsten, titanium, etc.), metal-containing compositions (for instance,metal silicide, metal nitride, etc.) and conductively-dopedsemiconductor material (for instance, conductively-doped silicon).

Intergate dielectric material 132 may, for example, comprise a layer ofsilicon nitride between a pair of layers of silicon dioxide (a so-calledONO stack).

Control gate material 134 may, for example, comprise, consistessentially of, or consist of one or more of metal (for instance,tungsten, titanium, etc.), metal-containing compositions (for instance,metal silicide, metal nitride, etc.) and conductively-dopedsemiconductor material (for instance, conductively-doped silicon).

Insulative cap material 136 may, for example, comprise, consistessentially of, or consist of one or more of silicon dioxide, siliconnitride and silicon oxynitride.

Pattern transfer material 138 may, for example, comprise, consistessentially of, or consist of transparent carbon or amorphous carbon.

Referring to FIG. 20, material 50 is formed over and around features102, 104, 106 and 108 of the silicon dioxide-containing maskingstructure. Material 50 may comprise any of the compositions discussedpreviously for material 50, and may, for example, comprise a non-wettingmaterial and/or a hydrophobic material. In the shown embodiment,material 50 extends across all exposed surfaces, rather than just acrossthe exposed surfaces of silicon dioxide-containing material 112. Inother embodiments, material 50 may be selectively formed to be onlyalong surfaces of silicon dioxide-containing material 112.

Referring to FIG. 21, material 50 is subjected to an anisotropic etch toremove the material 50 from over material 138. Although an anisotropicetch is described, material 50 may be removed from over material 138with any suitable etch. In some embodiments, a protective mask (notshown) may be formed over regions of material 50 which are not to beremoved, an etch then conducted to remove portions of material 50 thatare not protected by the mask, and then the mask may be removed to leavea construction in which material 50 only remains along silicondioxide-containing material 112.

Referring to FIG. 22, the silicon dioxide-containing masking structureis utilized to pattern underlying material 138.

Referring to FIG. 23, materials 128, 130, 132, 134 and 136 arepatterned; and materials 138, 112 and 50 are then removed. Thepatterning of various of materials 128, 130, 132, 134, 136 and 138 mayutilize one or more aqueous solutions, and material 50 may alleviatestiction that could occur between adjacent masking features during suchpatterning, (with the masking features being the features 102, 104, 106and 108 in FIG. 19). In some embodiments (not shown), a hydrophobiccoating may be formed on material 136 (the capping oxide) after material136 is patterned to avoid stiction during a wet clean that may followthe patterning of material 136.

Materials 138, 112 and 50 may be removed at any appropriate stagesrelative to one another. For instance, in some embodiments, materials112 and 50 may be removed after patterning of material 138, and prior totransfer of a pattern from material 138 into the materials underlyingmaterial 138. In other embodiments, all of materials 112, 50 and 138 maybe together removed after patterning of materials 128, 130, 132, 134 and136.

Although material 50 and silicon dioxide-containing material 112 areremoved from the completed structures in the embodiment of FIG. 23, inother embodiments, one or both of the materials 50 and 112 may remain incompleted structures formed utilizing materials 50 and 112 as a mask.

The construction of FIG. 23 has a plurality of flash transistor gates152, 154, 156 and 158 at locations originally defined by the silicondioxide-containing masking structure features 102, 104, 106 and 108 ofFIG. 19. The gates 152, 154, 156 and 158 may be incorporated into anysuitable integrated circuitry, and may, for example, be utilized in NANDmemory. Thus, the gates 152, 154, 156 and 158 may be considered NANDstructures (i.e., structures comprised by a NAND memory array).

Embodiments described herein are example embodiments, and thestiction-avoiding processes described herein may be utilized in otherapplications besides those specifically described.

In compliance with the statute, the subject matter disclosed herein hasbeen described in language more or less specific as to structural andmethodical features. It is to be understood, however, that the claimsare not limited to the specific features shown and described, since themeans herein disclosed comprise example embodiments. The claims are thusto be afforded full scope as literally worded, and to be appropriatelyinterpreted in accordance with the doctrine of equivalents.

1. A method of forming a capacitor, comprising: forming a storage node within an opening in a support material, the storage node having an outer sidewall surface along the support material; removing some of the support material to expose a portion of the outer sidewall surface; coating the exposed portion of the outer sidewall surface with non-wetting material; after said coating, removing additional support material to expose an uncoated region of the outer sidewall surface; after removing said additional support material, forming capacitor dielectric material along the outer sidewall surface of the storage node; and forming capacitor electrode material over the capacitor dielectric material.
 2. The method of claim 1 wherein the outer sidewall surface of the storage node consists of titanium nitride.
 3. The method of claim 2 wherein the coating with the non-wetting material comprises utilization of one or more halogen-and-silicon-containing compositions as precursors of the non-wetting material.
 4. The method of claim 2 wherein the coating with the non-wetting material comprises utilization of one or more halogen-containing silanes as precursors of the non-wetting material.
 5. The method of claim 2 wherein the coating with the non-wetting material comprises utilization of one or more of dimethyldichlorosilane, perfluoro-octyltrichlorosilane and perfluorodecanoic acid as precursors of the non-wetting material.
 6. The method of claim 1 wherein the storage node is a pedestal; and wherein the capacitor dielectric material, capacitor electrode material, and storage node together form a stud-type capacitor.
 7. The method of claim 1 wherein the storage node is a container; and wherein the capacitor dielectric material, capacitor electrode material, and storage node together form a container-type capacitor.
 8. The method of claim 1 further comprising removing the non-wetting material prior to forming the dielectric material.
 9. The method of claim 1 wherein the removing of the non-wetting material comprises thermal treatment with a temperature of at least about 100° C.
 10. The method of claim 1 wherein the removing of the non-wetting material comprises thermal treatment with a temperature of at least about 100° C., and utilization of an oxidant.
 11. The method of claim 1 wherein the removing of the non-wetting material comprises thermal treatment with a temperature of at least about 100° C., and utilization of ammonia.
 12. A method of forming a plurality of capacitors, comprising: patterning openings in a support material; forming a plurality of storage nodes within the openings, the storage nodes having top surfaces, and having outer sidewall surfaces extending downwardly from the top surfaces; the outer sidewall surfaces being along the support material; removing some of the support material to expose portions of the outer sidewall surfaces; coating the exposed portions of the outer sidewall surfaces with hydrophobic material; after said coating, removing additional support material to expose uncoated regions of the outer sidewall surfaces; after removing said additional support material, forming capacitor dielectric material along the top and outer sidewall surfaces of the storage nodes; and forming capacitor electrode material over the capacitor dielectric material.
 13. The method of claim 12 wherein water has a contact angle with the hydrophobic material of greater than or equal to about 90°.
 14. The method of claim 12 further comprising removing the hydrophobic material prior to forming the dielectric material.
 15. The method of claim 12 wherein the removing of the hydrophobic material comprises thermal treatment with a temperature of at least about 100° C.
 16. The method of claim 12 wherein the support material comprises a silicate glass.
 17. The method of claim 12 wherein the storage nodes are pedestals; and wherein the capacitor dielectric material, capacitor electrode material, and storage nodes together form a plurality of stud-type capacitors.
 18. The method of claim 12 wherein the storage nodes are containers; and wherein the capacitor dielectric material, capacitor electrode material, and storage nodes together form a plurality of container-type capacitors.
 19. A method of forming a plurality of capacitors, comprising: forming a silicon-dioxide-containing support material across a semiconductor substrate; patterning openings that extend entirely through the support material; forming storage node material within the openings, the storage node material within the openings defining storage node structures; said storage node structures having outer sidewall surfaces extending along the support material; removing some of the support material to expose segments of the outer sidewall surfaces; coating the exposed segments of the outer sidewall surfaces with hydrophobic material; after said coating, removing additional support material to expose uncoated regions of the outer sidewall surfaces; the removing of the additional support material utilizing an aqueous etchant comprising hydrofluoric acid; the storage node structures being spaced from one another by capillaries, and the aqueous etchant being within such capillaries; rinsing the aqueous etchant from the capillaries with an aqueous rinse solution; volatilizing the aqueous rinse solution to remove the aqueous rinse solution from the capillaries; after volatilizing the aqueous rinse solution, removing the hydrophobic material; after removing the hydrophobic material, forming capacitor dielectric material along the outer sidewall surfaces of the storage nodes; and forming capacitor electrode material over the capacitor dielectric material.
 20. The method of claim 19 wherein water has a contact angle with the hydrophobic material of greater than or equal to about 90°.
 21. The method of claim 19 wherein the coating of the exposed segments of the outer sidewall surfaces with the hydrophobic material also forms the hydrophobic material over the support material; and further comprising, prior to the removing of the additional support material, removing at least some of the hydrophobic material from over the support material.
 22. The method of claim 21 wherein the removing at least some of the hydrophobic material from over the support material comprises: forming a patterned mask over the support material, the patterned mask having an opening extending therethrough to define a region for a punch-through etch; and conducting the punch-through etch to punch through the hydrophobic material and to expose the support material.
 23. The method of claim 19 wherein the removing of the hydrophobic material utilizes a thermal treatment at a temperature of at least about 100° C.
 24. The method of claim 23 wherein the thermal treatment temperature is from about 100° C. to about 400° C.
 25. The method of claim 19 wherein the removing of the hydrophobic material utilizes oxidation.
 26. The method of claim 25 wherein the oxidation utilizes one or both of O₂ and O₃ as an oxidant.
 27. The method of claim 25 wherein the oxidation is conducted at a temperature of at least about 100° C. 